Method of forming a polishing pad having reduced striations

ABSTRACT

The present invention provides a method of forming a chemical mechanical polishing pad, comprising providing a tank with polymeric materials and providing a storage hopper with microspheres having an initial bulk density, wherein the storage hopper further comprises a porous membrane provided over a plenum. The method further provides the steps of connecting a fluidizing gas source to the plenum through a gas inlet line and fluidizing the microspheres and reducing the initial bulk density by feeding gas into the plenum. In addition, the method further provides the steps of providing a delivery system for delivering the polymeric materials and the microspheres to a mixer, forming a mixture of the polymeric materials and the microspheres, pouring the mixture into a mold to form a molded product and cutting the molded product into the polishing pad.

BACKGROUND OF THE INVENTION

The present invention relates to polishing pads for chemical mechanicalplanarization, and in particular, relates to polishing pads havingreduced striations. Further, the present invention relates toapparatuses and methods for forming polishing pads having reducedstriations.

In the fabrication of integrated circuits and other electronic devices,multiple layers of conducting, semiconducting and dielectric materialsare deposited on or removed from a surface of a semiconductor wafer.Thin layers of conducting, semiconducting, and dielectric materials maybe deposited by a number of deposition techniques. Common depositiontechniques in modem processing include physical vapor deposition (PVD),also known as sputtering, chemical vapor deposition (CVD),plasma-enhanced chemical vapor deposition (PECVD), and electrochemicalplating (ECP).

As layers of materials are sequentially deposited and removed, theuppermost surface of the wafer becomes non-planar. Because subsequentsemiconductor processing (e.g., metallization) requires the wafer tohave a flat surface, the wafer needs to be planarized. Planarization isuseful in removing undesired surface topography and surface defects,such as rough surfaces, agglomerated materials, crystal lattice damage,scratches, and contaminated layers or materials.

Chemical mechanical planarization, or chemical mechanical polishing(CMP), is a common technique used to planarize substrates, such assemiconductor wafers. In conventional CMP, a wafer is mounted on acarrier assembly and positioned in contact with a polishing pad in a CMPapparatus. The carrier assembly provides a controllable pressure to thewafer, pressing it against the polishing pad. The pad is moved (e.g.,rotated) relative to the wafer by an external driving force.Simultaneously therewith, a chemical composition (“slurry”) or otherpolishing solution is provided between the wafer and the polishing pad.Thus, the wafer surface is polished and made planar by the chemical andmechanical action of the pad surface and slurry.

Reinhardt et al., U.S. Pat. No. 5,578,362, discloses an exemplarypolishing pad known in the art. The polishing pad of Reinhardt comprisesa polymeric matrix having microspheres dispersed throughout. Generally,the micropheres are blended and mixed with a liquid polymeric material,for example, in a mass flow feed delivery system, and transferred to amold for curing. The molded article is then cut to form polishing pads.Unfortunately, polishing pads formed in this manner may have unwantedstriations.

Striations are the result of variations in bulk density of themicrospheres in the polymeric matrix. In other words, different areas ofhigher and lower concentrations of the microspheres are present in thepolymeric matrix. For example, in the polishing pad of Reinhardt, thelow true density of the microspheres inhibits the free or uninterruptedflow of the microspheres in the mass flow feed delivery system.Consequently, the microspheres tend to “cluster” together in varyingdegrees, at different points in the delivery process (i.e., causingvariations in bulk density or striations). These striations are unwantedbecause they may cause unpredictable, and perhaps, detrimental,polishing performances from one polishing pad to the next. Moreover,these striations may negatively affect polishing performances within thepad itself.

Typically, these striations were minimized by utilizing combinations ofgravity, various storage hopper designs, mechanical forces (e.g.,vibration), and manual, periodic-sample measuring, adjusting processconditions and re-measuring to determine bulk density. However, priorart apparatuses and methods are inadequate and inefficient atcontrolling bulk density to meet the ever increasing demands of the CMPindustry.

Hence, what is needed is a polishing pad having reduced striations.Moreover, what is needed is an apparatus and an efficient method offorming a polishing pad having reduced striations.

STATEMENT OF THE INVENTION

In a first aspect of the present invention, there is provided a methodof forming a chemical mechanical polishing pad, comprising: providing atank with polymeric materials; providing a storage hopper withmicrospheres having an initial bulk density, wherein the storage hopperfurther comprises a porous membrane provided over a plenum; connecting afluidizing gas source to the plenum through a gas inlet line; fluidizingthe microspheres and reducing the initial bulk density by feeding gasinto the plenum; providing a delivery system for delivering thepolymeric materials and the microspheres to a mixer; forming a mixtureof the polymeric materials and the microspheres; pouring the mixtureinto a mold to form a molded product; and cutting the molded productinto the polishing pad.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a polishing pad of the present invention havingreduced striations;

FIG. 2 illustrates an apparatus for forming the polishing pad of thepresent invention;

FIG. 3 illustrates a method for forming the polishing pad of the presentinvention;

FIG. 4 illustrates another embodiment of an apparatus for forming thepolishing pad of the present invention; and

FIG. 5 illustrates a CMP system utilizing the polishing pad of thepresent invention.

DETAILED DESCRIPTION OF THE INVENTION

The present invention provides a striation reduced polishing pad.Further, the present invention provides a novel apparatus and method forforming a striation reduced polishing pad. In particular, the presentinvention utilizes a unique bulk density control unit to reduce thestriations in the polishing pad. The bulk density control unitcomprises, a novel storage hopper for storing microspheres. The storagehopper further comprises a porous membrane provided over a plenum and afluidizing gas source connected to the plenum through a gas inlet line.The gas is fed into the plenum, which permeates through the porousmembrane and fluidizes or reduces the initial bulk density of themicrospheres in the storage hopper. Preferably, the initial bulk densityof the microspheres are reduced by at least 20 percent. This reductionin initial bulk density allows for the consistent, uninterrupted flow ofthe microspheres and results in less variations in bulk density, whichin turn, reduces striations in the novel polishing pad. As definedherein, “initial bulk density” is the true density of the microspheres.

Referring now to FIG. 1, a polishing pad 1 of the present invention isshown. Polishing pad 1 comprises a polishing layer or pad 4, and anoptional bottom layer or pad 2. The bottom layer 2 may be made of feltedpolyurethane, such as SUBA-IV™ pad manufactured by Rohm and HaasElectronic Materials CMP Inc. (“RHEM”), of Newark, DE. The polishing pad4 may comprise a polyurethane pad (e.g., a pad filled withmicrospheres), such as, IC 1000™ pad by RHEM. Polishing pad 4 mayoptionally be texturized as desired. A thin layer of pressure sensitiveadhesive 6 may hold the polishing pad 4 and the bottom layer 2 together.The adhesive 6 may be commercially available from 3M InnovativeProperties Company of St, Paul, Minn. Polishing layer 4 may have atransparent window 14 provided therein to facilitate end-pointdetection.

Referring now to FIG. 2, a polishing pad apparatus 20 for forming thepolishing pad 4 of the present invention is shown. The apparatus 20comprises a storage hopper 22 sized to hold a sufficient quantity ofmicrospheres or microelements 48. The storage hopper 22 is provided witha porous membrane 24 located at the bottom of the hopper 22, positionedabove the plenum 26. Preferably, at least a portion of the polymericmicrospheres are generally flexible. Suitable polymeric microspheresinclude inorganic salts, sugars and water-soluble particles. Examples ofsuch polymeric microspheres (or microelements) include polyvinylalcohols, pectin, polyvinyl pyrrolidone, hydroxyethylcellulose,methylcellulose, hydropropylmethylcellulose, carboxymethylcellulose,hydroxypropylcellulose, polyacrylic acids, polyacrylamides, polyethyleneglycols, polyhydroxyetheracrylites, starches, maleic acid copolymers,polyethylene oxide, polyurethanes, cyclodextrin and combinations thereof(e.g., Expancel™ from Akzo Nobel of Sundsvall, Sweden). The microspheres48 may be chemically modified to change the solubility, swelling andother properties by branching, blocking, and crosslinking, for example.Preferably, the microspheres 48 has a mean diameter that is less than150 μm, and more preferably a mean diameter of less than 50 μm. MostPreferably, the microspheres 48 has a mean diameter that is less than 15μm. Note, the mean diameter of the microspheres may be varied anddifferent sizes or mixtures of different microspheres 48 may beimpregnated in the polymeric material 52 as desired. A preferredmaterial for the microsphere is a copolymer of acrylonitrile andvinylidene chloride.

Further, a helical agitator 30 is provided in the storage hopper 22 andpositioned above the surface of the porous membrane 24. For example, thehelical agitator 30 may be provided 0.0127 m to 0.457 m above thesurface of the porous membrane 24. Preferably, the helical agitator 30may be provided 0.0127 m to 0.4 m above the surface of the porousmembrane 24. Most preferably, the helical agitator 30 may be provided0.0127 m to 0.0381 m above the surface of the porous membrane 24. Therotational direction and speed of the helical agitator 30 ispredetermined in order to facilitate the upward, vertical movement 72 ofthe microspheres 48 along the outer wall of the hopper 22 in conjunctionwith the downward, axial flow along the shaft of the agitator 30. Forexample, the speed of the helical agitator 30 may be set to a range of 5to 10 rpm.

In addition, the apparatus 20 further comprises a tank 50 to holdpolymeric materials 52. Note, any number of hoppers and tanks may beutilized in the present invention. Further, the apparatus 20 comprises amixer 68 for creating a mixture of the polymeric materials 52 andmicrospheres 48 from the first and second delivery lines 66, 44. Thestorage hopper 22, including the porous membrane 24 provided over theplenum 26, helical agitator 30 and fluidizing gas source 23, togethercomprise a bulk density control unit 21.

Advantageously, the porous membrane 24 may slope downward away from theouter walls of the hopper 22 to help facilitate the free flow of themicrospheres. Preferably, the porous membrane 24 may have a shallowangle of 0 degrees to 60 degrees, sloping downward away from the wallsof the hopper 22. More preferably, the porous membrane 24 may have ashallow angle of 0 degrees to 30 degrees, sloping downward away from thewalls of the hopper 22. Most preferably, the porous membrane 24 may havea shallow angle of 0 degrees to 15 degrees, sloping downward away fromthe walls of the hopper 22. In addition, the porous membrane 24 containsa discharge port 32 that passes through the plenum 26 and connects tothe feed line 34. Further, the feed line 34 may connect to pump 46, theninto the mixer 68 by direct feed line 19, for mixing with the polymericmaterial 52.

Advantageously, the porous membrane 24 can be fabricated from, forexample, sintered metal, compressed wire sheets, polyester felt, glassfrit, or any other material that is capable of achieving a permeabilitywith a pressure drop of 0.498 to 13.780 kPa at a 0.152 m/sec normal gasvelocity. More preferably, the porous membrane 24 is any material thatis capable of achieving a permeability with a pressure drop of 0.498 to6.890 kPa at a 0.152 m/sec normal gas velocity. Most preferably, theporous membrane 24 is any material that is capable of achieving apermeability with a pressure drop of 0.498 to 3.445 kPa at a 0.152 m/secnormal gas velocity.

In operation, fluidizing gas 28 is fed into the plenum 26 from a gasinlet line 27. A gas valve 25 regulates the amount of gas provided intothe plenum 26 from fluidizing gas source 23. The gas is provided at aflowrate necessary to achieve pressure drop, of the porous membrane 24.In this way, the fluidizing gas 28 permeates through the porous membrane24 and acts upon the microspheres 48. In other words, the fluidizing gas28 fluidizes or reduces the bulk density of the microspheres 48,facilitating the free flow of the microspheres 48 and reducingstriations in the polishing pad 4. Preferably, the fluidizing gas (e.g.,argon, helium and nitrogen) does not adversely react with themicrospheres 48 or polymeric materials 52.

Advantageously, in order to promote the flow of microspheres 48 from thehopper 22, the initial bulk density of the microspheres 48 should bereduced by at least 20 percent. As discussed above, “initial bulkdensity” is the true density of the microspheres. Throughout thespecification, bulk density was measured by a temperature-controlledpycnometer, utilizing helium gas. More preferably, the bulk density ofthe microspheres 48 should be reduced by at least 30 percent as comparedto an initial bulk density value of the microspheres. Most preferably,the bulk density of the microspheres 48 should be reduced by at least 35percent as compared to an initial bulk density value of themicrospheres. For example, where the microspheres (e.g., Expancel) hasan initial bulk density value of less than or equal to 42 kg/m³, thenthe microspheres should be fluidizes or reduced in bulk density to avalue of less than or equal to 33.6 kg/m³ (20 percent). More preferably,where the microspheres has an initial bulk density value of less than orequal to 42 kg/m³, then the microspheres should be fluidizes or reducedin bulk density to a value of less than or equal to 29.4 kg/m³(30percent). Most preferably, where the microspheres has an initial bulkdensity value of less than or equal to 42 kg/m³, then the microspheresshould be fluidizes or reduced in bulk density to a value of less thanor equal to 27.3 kg/m³(35 percent).

Optionally, the feed line 34 may be directed into the recirculation loop36. The recirculation loop 36 consists of a mass flow meter 38, arecirculation pump 40, a second fluidizing gas source 17, a divertingvalve 15 and a return line 42. The mass flow meter 38 may becommercially obtained from, for example, Micromotion of Boulder, Colo.The recirculation pump 40 can be a diaphragm, peristaltic, sine, or lobetype pump requiring no contact lubrication. The lines 34 and 42 cancomprise any non-rusting metal, plastic or polymeric material. In theabsence of the recirculation loop 36, the feed line 34 may connectdirectly into the metering pump 46, as discussed above.

The recirculation loop 36 helps the microspheres 48 to be more uniformlydistributed in hopper 22 and reduces the potential for densitystratification. In other words, the recirculation loop 36, including theflow meter 38, allows for an efficient method of measuring, displayingand controlling the bulk density of the microspheres 48. Hence, the bulkdensity control unit 21 further comprises a recirculation loop 36 forrecirculating the microspheres 48 until a desired bulk density isachieved. Advantageously, the mass flow meter 38 provides an automatedmethod for measuring the continuous bulk density of the microspheres 48.The mass flow meter 38 may measure and display density or mass flowmeasurements. Alternatively, in the absence of the mass flow meter 38 orrecirculation loop 36, the bulk density of the microspheres 48 can bemonitored by manually, periodically sampling the fluidized microspheres48 from delivery line 44 in conjunction with a scale (not shown).

In operation, the mass flow meter 38 measures the incoming bulk densityof the microspheres 48. If the calculated bulk density is withinacceptable, predetermined tolerances, then the measured microspheres 48are directed by the diverting valve 15 to the metering pump 46 to themixer 68 via the delivery line 44. If the calculated bulk density is toohigh or low, then the measured microspheres 48 are directed by thediverting valve 15 to the recirculation pump 40 back to the storagehopper 22 via the return line 42, to be fluidized again. In other words,if the bulk density is too high, then additional fluidization isconducted and, if the bulk density is too low, then fluidization isreduced and the microspheres are allowed to increase in bulk density.Additionally, if the calculated bulk density is too high, then themeasured microspheres are directed by the diverting valve 15 to therecirculation pump 40 where additional fluidizing gas, provided by asecond fluidizing gas source 17, is fed directly into the receiving sideof the recirculation pump 40. By providing the additional fluidizinggas, the bulk density is effectively reduced at the recirculation pump40 and the return line 42, allowing the microspheres 48 entering feedline 34 to be at a lower bulk density. Note, the microspheres 48 can bereturned to the hopper 22 at any level that does not interfere with thedischarge of the microspheres 48 from the discharge port 32, at thebottom of the hopper 22.

Similarly, a second helical agitator 54 is provided in the tank 50. Therotational direction and speed of the second helical agitator 54 ispredetermined in order to facilitate the upward vertical movement 72 ofthe polymeric materials 52 along the outer wall of the tank 50 inconjunction with a downward axial flow along the shaft of the secondhelical agitator 54.

The polymeric materials 52 are fed through an opening at the bottom ofthe tank 50 that connects to the second feed line 56 of the secondrecirculation loop 62. The second recirculation loop 62 consists of asecond feed line 56, a second metering pump 58, a diverting valve 60 anda return line 64. The second metering pump 58 can be diaphragm,peristaltic, sine, or lobe type pumps requiring no contact lubrication.The lines 56 and 64 may comprise any non-rusting metal, plastic orpolymeric material.

In operation, the polymeric materials 52 and microspheres 48 are fedinto the mixer 68 via a delivery system, namely, the first and seconddelivery lines 66, 44, respectively. After the microspheres 48 andpolymeric materials 52 are properly mixed, the mixture is provided in amold 70, which is heated and cut to form polishing pad 4.Advantageously, the mixer 68 may optionally be vented to release anyexcess gas used in fluidizing the microspheres.

Accordingly, as illustrated in FIG. 3, the present invention provides amethod of forming a chemical mechanical polishing pad, comprising step101 of providing a tank 50 with polymeric materials 52, and step 103 ofproviding a storage hopper 22 with microspheres 48 having an initialbulk density, wherein the storage hopper 22 further comprises a porousmembrane 24 provided over a plenum 26. In addition, step 105 providesthe step of connecting a fluidizing gas source 23 to the plenum 26through a gas inlet line 27. Step 107 provides the step of fluidizingthe microspheres 48 and reducing the initial bulk density by feeding gas28 into the plenum 26. Step 109 provides the step of providing adelivery system for delivering the polymeric materials 52 and themicrospheres 48 to a mixer 68. Step 111 provides the step of forming amixture of the polymeric materials 52 and the microspheres 48. Step 113provides the step of pouring the mixture into a mold 70; and cutting themold into the polishing pad 4.

Note, although the present embodiment is described with respect to a“one-hopper, one-tank” system, the invention is not so limited. In otherwords, multiple hoppers and tanks for storing the microspheres andpolymeric materials, respectively, may be utilized. For example, in FIG.3, an apparatus comprising a storage hopper 22 and tanks 50, 71 areshown. Similar to tank 50, a third helical agitator 76 is provided inthe tank 71. The rotational direction and speed of the third helicalagitator 76 is predetermined in order to facilitate the upward verticalmovement 72 of the curing agent 74 along the outer wall of the tank 71in conjunction with a downward axial flow along the shaft of the thirdhelical agitator 76. In this embodiment, tank 50 contains “prepolymer”materials, further discussed below.

The curing agent 74 are directed through an opening at the bottom of thetank 71 that connects to the third feed line 78 of the thirdrecirculation loop 86. The third recirculation loop 86 consists of adiverting valve 82 and a return line 88. The third metering pump 80 canbe a diaphragm, peristaltic, sine, or lobe type pump requiring nocontact lubrication. The lines 78 and 88 may comprise any non-rustingmetal, plastic or polymeric material. Further, a third delivery line 84is provided that directs the curing agent 74 into the mixer 68. Note,for simplification, some of the parts present in the recirculation loop36 for the microspheres are not present in the recirculation loops 62,86 for the polymeric materials (e.g., mass flow meter 38). However, therecirculation loops 62, 86 may contain all or some of the features ofthe recirculation loop 36 for the microspheres 48.

Additionally, in an exemplary embodiment of the present invention, thepolymeric material of polishing pad 4 is made from apolyisocyanate-containing material (“prepolymer”). The prepolymer is areaction product of a polyisocyanate (e.g., diisocyanate) and ahydroxyl-containing material. The polyisocyanate may be aliphatic oraromatic. The prepolymer is then cured with a curing agent. Preferredpolyisocyanates include, but are not limited to, methlene bis 4,4′cyclohexylisocyanate, cyclohexyl diisocyanate, isophorone diisocyanate,hexamethylene diisocyanate, propylene-1,2-diisocyanate,tetramethylene-1,4-diisocyanate, 1,6-hexamethylene-diisocyanate,dodecane-1,12-diisocyanate, cyclobutane-1,3-diisocyanate,cyclohexane-1,3-diisocyanate, cyclohexane-1,4-diisocyanate,1-isocyanato-3,3,5-trimethyl-5-isocyanatomethylcyclohexane, methylcyclohexylene diisocyanate, triisocyanate of hexamethylene diisocyanate,triisocyanate of 2,4,4-trimethyl-1,6-hexane diisocyanate, uretdione ofhexamethylene diisocyanate, ethylene diisocyanate,2,2,4-trimethylhexamethylene diisocyanate, 2,4,4-trimethylhexamethylenediisocyanate, dicyclohexylmethane diisocyanate, and mixtures thereof.The preferred polyisocyanate is aliphatic. The preferred aliphaticpolyisocyanate has less than 14 percent unreacted isocyanate groups.

Advantageously, the hydroxyl-containing material is a polyol. Exemplarypolyols include, but are not limited to, polyether polyols,hydroxy-terminated polybutadiene (including partially/fully hydrogenatedderivatives), polyester polyols, polycaprolactone polyols, polycarbonatepolyols, and mixtures thereof.

In one preferred embodiment, the polyol includes polyether polyol.Examples include, but are not limited to, polytetramethylene etherglycol (“PTMEG”), polyethylene propylene glycol, polyoxypropyleneglycol, and mixtures thereof. The hydrocarbon chain can have saturatedor unsaturated bonds and substituted or unsubstituted aromatic andcyclic groups. Preferably, the polyol of the present invention includesPTMEG. Suitable polyester polyols include, but are not limited to,polyethylene adipate glycol, polybutylene adipate glycol, polyethylenepropylene adipate glycol, o-phthalate-1,6-hexanediol, poly(hexamethyleneadipate) glycol, and mixtures thereof. The hydrocarbon chain can havesaturated or unsaturated bonds, or substituted or unsubstituted aromaticand cyclic groups. Suitable polycaprolactone polyols include, but arenot limited to, 1,6-hexanediol-initiated polycaprolactone, diethyleneglycol initiated polycaprolactone, trimethylol propane initiatedpolycaprolactone, neopentyl glycol initiated polycaprolactone,1,4-butanediol-initiated polycaprolactone, PTMEG-initiatedpolycaprolactone, and mixtures thereof. The hydrocarbon chain can havesaturated or unsaturated bonds, or substituted or unsubstituted aromaticand cyclic groups. Suitable polycarbonates include, but are not limitedto, polyphthalate carbonate and poly(hexamethylene carbonate) glycol.

Advantageously, the curing agent is a polydiamine. Preferredpolydiamines include, but are not limited to, diethyl toluene diamine(“DETDA”), 3,5-dimethylthio-2,4-toluenediamine and isomers thereof,3,5-diethyltoluene-2,4-diamine and isomers thereof, such as3,5-diethyltoluene-2,6-diamine,4,4′-bis-(sec-butylamino)-diphenylmethane,1,4-bis-(sec-butylamino)-benzene, 4,4′-methylene-bis-(2-chloroaniline),4,4′-methylene-bis-(3-chloro-2,6-diethylaniline) (“MCDEA”),polytetramethyleneoxide-di-p-aminobenzoate, N,N′-dialkyldiamino diphenylmethane, p,p′-methylene dianiline (“MDA”), m-phenylenediamine (“MPDA”),methylene-bis 2-chloroaniline (“MBOCA”),4,4′-methylene-bis-(2-chloroaniline) (“MOCA”),4,4′-methylene-bis-(2,6-diethylaniline) (“MDEA”),4,4′-methylene-bis-(2,3-dichloroaniline) (“MDCA”),4,4′-diamino-3,3′-diethyl-5,5′-dimethyl diphenylmethane,2,2′,3,3′-tetrachloro diamino diphenylmethane, trimethylene glycoldi-p-aminobenzoate, and mixtures thereof. Preferably, the curing agentof the present invention includes 3,5-dimethylthio-2,4-toluenediamineand isomers thereof. Suitable polyamine curatives include both primaryand secondary amines.

In addition, other curatives such as, a diol, triol, tetraol, orhydroxy-terminated curative may be added to the aforementionedpolyurethane composition. Suitable diol, triol, and tetraol groupsinclude ethylene glycol, diethylene glycol, polyethylene glycol,propylene glycol, polypropylene glycol, lower molecular weightpolytetramethylene ether glycol, 1,3-bis(2-hydroxyethoxy) benzene,1,3-bis-[2-(2-hydroxyethoxy) ethoxy]benzene,1,3-bis-{2-[2-(2-hydroxyethoxy)ethoxy]ethoxy}benzene, 1,4-butanediol,1,5-pentanediol, 1,6-hexanediol, resorcinol-di-(beta-hydroxyethyl)ether, hydroquinone-di-(beta-hydroxyethyl) ether, and mixtures thereof.Preferred hydroxy-terminated curatives include1,3-bis(2-hydroxyethoxy)benzene, 1,3-bis-[2-(2-hydroxyethoxy)ethoxy]benzene, 1,3-bis-{2-[2-(2-hydroxyethoxy)ethoxy]ethoxy}benzene,1,4-butanediol, and mixtures thereof. Both the hydroxy-terminated andamine curatives can include one or more saturated, unsaturated,aromatic, and cyclic groups. Additionally, the hydroxy-terminated andamine curatives can include one or more halogen groups. The polyurethanecomposition can be formed with a blend or mixture of curing agents. Ifdesired, however, the polyurethane composition may be formed with asingle curing agent.

In a preferred embodiment of the invention, the polymeric material 52may be formed of, for example, polyurethanes, both thermoset andthermoplastic, polycarbonates, polyesters, silicones, polyimides andpolysulfone. Other example materials for polymeric material 52 include,but are not limited to, polyvinyl chloride, polyacrylonitrile,polymethylmethacrylate, polyvinylidene fluoride, polyethyleneterephthalate, polyetheretherketone, polyetherketone, polyetherimide,ethylvinyl acetate, polyvinyl butyrate, polyvinyl acetate, acrylonitrilebutadiene styrene, fluorinated ethylene propylene and perfluoralkoxypolymers, and combinations thereof. A preferred polymeric material 52 ispolyurethane.

Referring now to FIG. 4, a CMP apparatus 73 utilizing the striationreduced polishing pad of the present invention is provided. Apparatus 73includes a wafer carrier 81 for holding or pressing the semiconductorwafer 83 against the polishing platen 91. The polishing platen 91 isprovided with a stacked polishing pad 1, including striation reducedpolishing pad 4, of the present invention. As discussed above, pad 1 hasa bottom layer 2 that interfaces with the surface of the platen 91, anda polishing pad 4 that is used in conjunction with a chemical polishingslurry to polish the wafer 83. Note, although not pictured, any meansfor providing a polishing fluid or slurry can be utilized with thepresent apparatus. The platen 91 is usually rotated about its centralaxis 79. In addition, the wafer carrier 81 is usually rotated about itscentral axis 75, and translated across the surface of the platen 91 viaa translation arm 77. Note, although a single wafer carrier is shown inFIG. 4, CMP apparatuses may have more than one spaced circumferentiallyaround the polishing platen. In addition, a transparent hole 87 isprovided in the platen 91 and overlies the window 14 of pad 1.Accordingly, transparent hole 32 provides access to the surface of thewafer 83, via window 14, during polishing of the wafer 83 for accurateend-point detection. Namely, a laser spectrophotometer 89 is providedbelow the platen 91 that projects a laser beam 85 to pass and returnthrough the transparent hole 87 and window 14 for accurate end-pointdetection during polishing of the wafer 83.

Accordingly, the present invention provides a method of forming achemical mechanical polishing pad, comprising providing a tank withpolymeric materials and providing a storage hopper with microsphereshaving an initial bulk density, wherein the storage hopper furthercomprises a porous membrane provided over a plenum. The method furtherprovides the steps of connecting a fluidizing gas source to the plenumthrough a gas inlet line and fluidizing the microspheres and reducingthe initial bulk density by feeding gas into the plenum. In addition,the method further provides the steps of providing a delivery system fordelivering the polymeric materials and the microspheres to a mixer,forming a mixture of the polymeric materials and the microspheres,pouring the mixture into a mold to form a molded product and cutting themolded product into the polishing pad.

1. A method of forming a chemical mechanical polishing pad, comprising:providing a tank with polymeric materials; providing a storage hopperwith microspheres having an initial bulk density, wherein the storagehopper further comprises a porous membrane provided over a plenum;connecting a fluidizing gas source to the plenum through a gas inletline; fluidizing the microspheres and reducing the initial bulk densityby feeding gas into the plenum; providing a delivery system fordelivering the polymeric materials and the microspheres to a mixer;forming a mixture of the polymeric materials and the microspheres;pouring the mixture into a mold to a form a molded product; and cuttingthe molded product into the polishing pad.
 2. The method of claim 1wherein the step of fluidizing the microspheres reduces the initial bulkdensity by at least 20 percent.
 3. The method of claim 1 wherein theporous membrane achieves permeability with a pressure drop of 0.498 to13.780 kPa at a 0.152 m/sec normal gas velocity.
 4. The method of claim1 further comprising the step of providing a recirculation loop forrecirculating the microspheres back to the storage hopper beforedelivering the microspheres to the mixer.
 5. The method of claim 4further comprising the step of providing a mass flow sensor formeasuring a continuous bulk density of the microspheres.
 6. The methodof claim 4 further comprising the step of providing a secondaryfluidizing gas source for further reducing the bulk density of themicrospheres.
 7. The method of claim 1 further comprising the step ofproviding an agitator in the storage hopper to facilitate fluidizationof the microspheres.
 8. The method of claim 1 further comprising thestep of venting the mixer before pouring the mixture.
 9. The method ofclaim 1 wherein the microsphere comprises polyvinyl alcohols, pectin,polyvinyl pyrrolidone, hydroxyethylcellulose, methylcellulose,hydropropylmethylcellulose, carboxymethylcellulose,hydroxypropylcellulose, polyacrylic acids, polyacrylamides, polyethyleneglycols, polyhydroxyetheracrylites, starches, maleic acid copolymers,polyethylene oxide, polyurethanes, cyclodextrin, copolymers ofacrylonitrile and vinylidene chloride and combinations thereof.
 10. Themethod of claim 1 wherein the polymeric material comprises,polyurethanes, polycarbonates, polyesters, silicones, polyimides,polysulfone, polyvinyl chloride, polyacrylonitrile,polymethylmethacrylate, polyvinylidene fluoride, polyethyleneterephthalate, polyetheretherketone, polyetherketone, polyetherimide,ethylvinyl acetate, polyvinyl butyrate, polyvinyl acetate, acrylonitrilebutadiene styrene, fluorinated ethylene propylene and perfluoralkoxypolymers, and combinations thereof.